1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace

Product Details
After-sales Service: 12 Months
Warranty: 12 Months
Application: School, Lab
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  • 1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace
  • 1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace
  • 1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace
  • 1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace
  • 1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace
  • 1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace
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  • Overview
  • Product Description
  • Product Parameters
  • Detailed Photos
  • Company Profile
  • FAQ
Overview

Basic Info.

Model NO.
TN-O1200-50IIIT
Customized
Customized
Certification
CE
Structure
Desktop
Material
Stainless Steel
Type
Tubular Furnace
Gas Supply System
Gas Flow Flowmeter
RF Power Output Power
50W
Vacuum Pump
Bipolar Rotary Vane Vacuum Pump
Working Temperature
<=1200c
Mass Flowmeter
up to 5ways
RF Frequency
13.56MHz
Ultimate Vacuum
10^-1PA
RF
13.56MHz+0.005%
Heating Zone
Single Heating Zone 200mm
Cooling Method
Forced Air Cooling
Furnace Tube Size
Dia. 50*1200mm
Furnace Tube Material
High Purity Quartz
Transport Package
Standard Export Fumigation Sign Wooden Box Package
Specification
2400*800*1250mm
Trademark
TN
Origin
Henan China
HS Code
8486209000
Production Capacity
220/Month

Product Description

1200c Plasma Enhanced Chemical Vapor Deposition PECVD Vacuum Furnace

Product Description

Plasma enhanced CVD system consists of a plasma generator, a three-heating zone tube furnace, a single-heating zone tube furnace, an RF power supply, and a vacuum system.
In order for the chemical reaction to take place at a lower temperature, the activity of the plasma is utilized to promote the reaction, and thus the CVD is called plasma enhanced chemical vapor deposition (PECVD). The PECVD graphene film preparation device ionizes a gas containing a film constituent atom by means of a RF output of 13.56 Mhz, forms a plasma in a vacuum chamber, utilizes strong chemical activity of the plasma, improves reaction conditions, and utilizes plasma activity to promote the reaction, then deposits a desired film on the substrate.


applications:
This equipment can be used in various test places such as graphene preparation, sulfide preparation, and nanometer material preparation. Various films such as SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano-silicon, SiC, diamond-like, etc. can be deposited on the surface of a sheet or similar shaped sample, and p-type and n-type doped films can also be deposited. The deposited film has good uniformity, compactness, adhesion, and insulation. It is widely used in the fields of cutters, high-precision molds, hard coatings, high-end decoration, etc.

 
Product Parameters
 
ree-heating zone tube furnace Model TN-O1200-50IIIT
Tube material High purity quartz
Tube diameter 50mm
Tube length 2830mm
Furnace chamber length 660mm
Heating zone length 200mm+200mm+200mm
Operating temperature 0~1100ºC
Temperature control accuracy ±1ºC
Temperature control mode 30 or 50 segment program temperature control
Display mode LCD
Sealing method 304 stainless steel vacuum flange
Flange interface 1/4" ferrule connector, KF16/25/40 joint
Vacuum 4.4E-3Pa
Power supply AC:220V 50/60Hz
Single-heating zone tube furnace Model CY-O1200-50IT
Tube material High purity quartz
Tube diameter 50mm
Tube length 2830mm
Furnace chamber length 440mm
Heating zone length 400mm
Constant   temperature zone 200mm
Operating   temperature 0~1100ºC
Temperature control accuracy ±1ºC
Temperature control mode 30 or 50 segment program temperature control
Display mode LCD
Sealing method 304 stainless steel vacuum flange
Flange interface 1/4" ferrule connector, KF16/25/40 joint
Vacuum 4.4E-3Pa
Power supply AC:220V 50/60Hz
RF output system Power range 0~500W adjustable
Working frequency 13.56MHz+0.005%
Working mode Continuous output
Display mode LCD
Matched impedance mode Can match, the glow is evenly covered with three heating zone furnace tubes
Power stability ≤2W
Normal working reflected power ≤3W
Amplified reflected power ≤70W
Harmonic component ≤-50dBc
Machine efficiency ≥70%
Power Factor ≥90%
Supply voltage / frequency Single-phase AC (187V~153V) Frequency 50/60Hz
Control mode Internal control / PLC analog / RS232 / 485 communication
Power protection settings DC overcurrent protection, power amplifier over temperature protection, reflected power protection
cooling method Forced air cooling
Glow length In the Ar, the RF power supply and the coil are combined to glow and the glow can fill the length of the furnace in three heating zones.
Gas supply system Four-channel mass flowmeter Mass flowmeter
Flow range MFC1 range: 0~200sccm 
MFC2 range:   0~200sccm
MFC3 range: 0~500sccm 
MFC4 range: 0~500sccm
Corresponding to gases H2, CH4, N2, Ar,
measurement accuracy ±1.5%F.S
Repeatability ±0.2%FS
Linear precision ±1%F.S.
Response time ≤4s
Work pressure -0.15Mpa~0.15Mpa
flow control LCD touch screen control, digital display, each-channel gas contains a needle valve for individual control
Intake interface Can be connected to 1/4NPS or 6mm outer   diameter stainless steel tube
Outlet interface Can be connected to 1/4NPS or 6mm outer   diameter stainless steel tube
Connection method Double ferrule connector
Operating temperature 5~45ºC
Gas premix Equipped with gas premixing device
Exhaust system Mechanical pump Rotary vane pump
Pumping rate 1.1L/S 
Exhaust interface KF16
Vacuum measurement Resistance gauge
Ultimate vacuum 1.0E-1Pa
Power supply AC:220V 50/60Hz
Pumping interface KF16
Rail Rail length 2.5m~3m
It can realize the sliding of one furnace position length in the three-heating zone furnace to achieve rapid temperature rise and fall.
 
Detailed Photos

Related photos of PECVD Vacuum Furnace
1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace


 





 
Company Profile

 


1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace1200c Plasma Enhanced Chemical Vapor Deposition Pecvd Vacuum Furnace
FAQ

Q. Are you a manufacturer or a trading company?

A. We are professional laboratory instrument manufacturers, have their own design team and factory, have mature technical experience, and can guarantee the quality of products and the optimal price.

Q. How is your company's product after-sales service system?
A. The product warranty period is 12 months, we can provide lifetime maintenance. We have professional pre-sales and after-sales departments that can respond to you within 24 hours to resolve any technical issues.

Q. How long is your delivery time? If I want to customize the instrument, how long does it take?
A.1. If the goods are in stock, it is 5-10 days. 2. We can provide customized services for our customers. It usually takes 30-60 days depending on the specifications of the custom instrument.

Q. Our country's power supply and plug are different. How do you solve it?
A. We can supply a transformer and plug according to your local requirements according to the power plug of different countries.

Q. How to pay?
A.T / T, L / C, D / P, etc., it is recommended to use Made-in-China Trade Guarantee.

Q. How is the package of goods? Delivery methods?
A.1. Standard export fumigation sign wooden box packaging 2. Express, air, sea shipping according to customer requirements, find the most suitable way.

More questions, please contact me.
 

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